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[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Modeling the Effect of Conduction Band Density of States on Interface Trap Occupation and Its Influence on 4H-SiC MOSFET Performance

✍ Scribed by Potbhare, Siddharth; Akturk, Akin; Goldsman, Neil; Lelis, Aivars; Dhar, Sarit; Ryu, Sei-Hyung; Agarwal, Anant

Book ID: 120735617
Publisher: IEEE
Year: 2009
Weight: 319 KB
Category: Article
DOI: 10.1109/SISPAD.2009.5290228

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