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[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - Fundamentals and extraction of velocity saturation in sub-100nm (110)-Si and (100)-Ge

✍ Scribed by Pantisano, L.; Trojman, L.; Mitard, J.; DeJaeger, B.; Severi, S.; Eneman, G.; Crupi, G.; Hoffmann, T.; Ferain, I.; Meuris, M.; Heyns, M.

Book ID: 126703400
Publisher: IEEE
Year: 2008
Weight: 333 KB
Category: Article
ISBN: 142441802X
DOI: 10.1109/VLSIT.2008.4588560

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