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[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - 45nm High-k + metal gate strain-enhanced transistors

✍ Scribed by Auth, C.; Cappellani, A.; Chun, J.-S.; Dalis, A.; Davis, A.; Ghani, T.; Glass, G.; Glassman, T.; Harper, M.; Hattendorf, M.; Hentges, P.; Jaloviar, S.; Joshi, S.; Klaus, J.; Kuhn, K.; Lavric, D.; Lu, M.; Mariappan, H.; Mistry, K.; Norris, B.; Rahhal-orabi, N.; Ranade, P.; Sandford, J.; Shifren, L.; Souw, V.; Tone, K.; Tambwe, F.; Thompson, A.; Towner, D.; Troeger, T.; Vandervoorn, P.; Wallace, C.; Wiedemer, J.; Wiegand, C.

Book ID: 120177813
Publisher: IEEE
Year: 2008
Weight: 579 KB
Category: Article
ISBN: 142441802X
DOI: 10.1109/VLSIT.2008.4588589

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