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[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - Variability aware modeling and characterization in standard cell in 45 nm CMOS with stress enhancement technique

✍ Scribed by Aikawa, H.; Morifuji, E.; Sanuki, T.; Sawada, T.; Kyoh, S.; Sakata, A.; Ohta, M.; Yoshimura, H.; Nakayama, T.; Iwai, M.; Matsuoka, F.

Book ID: 126573525
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 264 KB
Category: Article
ISBN: 142441802X
DOI: 10.1109/VLSIT.2008.4588574

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