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[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - Strain additivity in III-V channels for CMOSFETs beyond 22nm technology node

✍ Scribed by Suthram, S.; Sun, Y.; Majhi, P.; Ok, I.; Kim, H.; Harris, H. R.; Goel, N.; Parthasarathy, S.; Koehler, A.; Acosta, T.; Nishida, T.; Tseng, H.-H.; Tsai, W.; Lee, J.; Jammy, R.; Thompson, S. E.

Book ID: 120656814
Publisher: IEEE
Year: 2008
Weight: 247 KB
Category: Article
ISBN: 142441802X
DOI: 10.1109/VLSIT.2008.4588611

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