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[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)

✍ Scribed by Hamaguchi, M.; Yin, H.; Saenger, K. L.; Sung, C. Y.; Hasumi, R.; Iijima, R.; Ohuchi, K.; Takasu, Y.; Ott, J. A.; Kang, H.; Biscardi, M.; Li, J.; Domenicucci, A. G.; Zhu, Z.; Ronsheim, P.; Zhang, R.; Rovedo, N.; Utomo, H.; Fogel, K.; de Souza, J.P.; Sadana, D.K.; Takayanagi, M.; Park, D.; Shahidi, G.; Ishimaru, K.

Book ID: 126752487
Publisher: IEEE
Year: 2008
Weight: 518 KB
Category: Article
ISBN: 142441802X
DOI: 10.1109/VLSIT.2008.4588609

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