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[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - Roles of high-k and interfacial layers on TDDB reliability studied with HfAlOX/SiO2 stacked gate dielectrics

✍ Scribed by Okada, Kenji; Ota, Hiroyuki; Hirano, Akito; Ogawa, Arito; Nabatame, Toshihide; Toriumi, Akira

No coin nor oath required. For personal study only.

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