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[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - Impacts of process induced interfacial defects on gate oxide integrity

✍ Scribed by Liu, N.; Haggag, A.; Peschke, J.; Moosa, M.; Weintraub, C.; Lazar, H.; Campbell, G.; Srivastava, A.; Liu, J.; Porter, J.; Picone, K.; Parrish, J.; Jiang, J.

Book ID: 127225643
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 256 KB
Edition: 46
Category: Article
ISBN: 1424420490
DOI: 10.1109/relphy.2008.4559008

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