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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

✍ Scribed by Lee, H. Y.; Chen, P. S.; Wu, T. Y.; Chen, Y. S.; Wang, C. C.; Tzeng, P. J.; Lin, C. H.; Chen, F.; Lien, C. H.; Tsai, M.-J.

Book ID: 111966737
Publisher: IEEE
Year: 2008
Weight: 301 KB
Volume: 0
Category: Article
ISBN: 1424423775
DOI: 10.1109/iedm.2008.4796677

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