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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Fabrication and characterisation of strained Si heterojunction bipolar transistors on virtual substrates

✍ Scribed by Persson, S.; Fjer, M.; Escobedo-Cousin, E.; Malm, G.; Wang, Y.-B.; Hellstrom, P.-E.; Ostling, M.; Parker, E.H.C.; Nash, L.J.; Majhi, P.; Olsen, S.H.; O'Neill, A.G.

Book ID: 118258282
Publisher: IEEE
Year: 2008
Weight: 770 KB
Volume: 0
Category: Article
ISBN: 1424423775
DOI: 10.1109/iedm.2008.4796800

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