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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Oxide-based RRAM switching mechanism: A new ion-transport-recombination model

โœ Scribed by Gao, B.; Yu, S.; Xu, N.; Liu, L.F.; Sun, B.; Liu, X.Y.; Han, R.Q.; Kang, J.F.; Yu, B.; Wang, Y.Y.


Book ID
115449426
Publisher
IEEE
Year
2008
Weight
718 KB
Volume
0
Category
Article
ISBN
1424423775

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