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[IEEE 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual - Orlando, FL, USA (30 April-3 May 2001)] 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) - Hot-carrier reliability of p-MOSFET with ultra-thin silicon nitride gate dielectric

✍ Scribed by Polishchuk, I.; Yee-Chia Yeo, ; Qiang Lu, ; Tsu-Jae King, ; Chenming Hu,

Book ID: 126768456
Publisher: IEEE
Year: 2001
Weight: 511 KB
Category: Article
ISBN-13: 9780780365872
DOI: 10.1109/RELPHY.2001.922937

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