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[IEEE 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual - Orlando, FL, USA (30 April-3 May 2001)] 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) - The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

✍ Scribed by Suliman, S.A.; Gallogunta, N.; Trabzon, L.; Hao, J.; Dolny, G.; Ridley, R.; Grebs, T.; Benjamin, J.; Kocon, C.; Zeng, J.; Knoedler, C.M.; Horn, M.; Awadelkarim, O.O.; Fonash, S.J.; Ruzyllo, J.

Book ID: 126623467
Publisher: IEEE
Year: 2001
Weight: 744 KB
Category: Article
ISBN-13: 9780780365872
DOI: 10.1109/RELPHY.2001.922920

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