𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual - Orlando, FL, USA (30 April-3 May 2001)] 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) - The effects of STI process parameters on the integrity of dual gate oxides

✍ Scribed by Hoon Lim, ; Seung-Jae Lee, ; Jong-Mil Youn, ; Tae-Hong Ha, ; Jin-Ho Kim, ; Bong-Hyun Choi, ; Ki-Joon Kim, ; Ho-Jin Kim, ; Kyeong-Tae Kim, ; Hyun-Geun Byun,

Book ID: 126535305
Publisher: IEEE
Year: 2001
Weight: 521 KB
Category: Article
ISBN-13: 9780780365872
DOI: 10.1109/RELPHY.2001.922880

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2001 IEEE International Reliabilit

[IEEE 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual - Orlando, FL, USA (30 April-3 May 2001)] 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) - Non-destructive resonant frequency measurement on MEMS actuators

✍ Smith, N.F.; Tanner, D.M.; Swanson, S.E.; Miller, S.L. 📂 Article 📅 2001 🏛 IEEE ⚖ 1007 KB

[IEEE 2001 IEEE International Reliabilit

[IEEE 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual - Orlando, FL, USA (30 April-3 May 2001)] 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) - Individual cell measuring method for FeRAM retention testing

✍ Tanabe, N.; Koike, H.; Miwa, T.; Yamada, J.; Seike, A.; Kasai, N.; Toyoshima, H. 📂 Article 📅 2001 🏛 IEEE ⚖ 437 KB

[IEEE 2001 IEEE International Reliabilit

[IEEE 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual - Orlando, FL, USA (30 April-3 May 2001)] 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) - Hot-carrier reliability of p-MOSFET with ultra-thin silicon nitride gate dielectric

✍ Polishchuk, I.; Yee-Chia Yeo, ; Qiang Lu, ; Tsu-Jae King, ; Chenming Hu, 📂 Article 📅 2001 🏛 IEEE ⚖ 511 KB

[IEEE 2001 IEEE International Reliabilit

[IEEE 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual - Orlando, FL, USA (30 April-3 May 2001)] 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) - The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

✍ Suliman, S.A.; Gallogunta, N.; Trabzon, L.; Hao, J.; Dolny, G.; Ridley, R.; Greb 📂 Article 📅 2001 🏛 IEEE ⚖ 744 KB

[IEEE 2001 IEEE International Reliabilit

[IEEE 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual - Orlando, FL, USA (30 April-3 May 2001)] 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) - Is product screen enough to guarantee low failure rate for the customer?

✍ Ruprecht, M.W.; La Rosa, G.; Filippi, R.G. 📂 Article 📅 2001 🏛 IEEE ⚖ 623 KB

[IEEE 2001 IEEE International Reliabilit

[IEEE 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual - Orlando, FL, USA (30 April-3 May 2001)] 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) - Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications

✍ Degraeve, R.; Kaczer, B.; De Keersgieter, A.; Groeseneken, G. 📂 Article 📅 2001 🏛 IEEE ⚖ 763 KB