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[IEEE 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual - Orlando, FL, USA (30 April-3 May 2001)] 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) - A new physical and quantitative width dependent hot carrier model for shallow-trench-isolated CMOS devices

✍ Scribed by Chung, S.S.; Chen, S.-J.; Yang, W.-J.; Yang, J.-J.

Book ID: 126600710
Publisher: IEEE
Year: 2001
Weight: 505 KB
Category: Article
ISBN-13: 9780780365872
DOI: 10.1109/RELPHY.2001.922936

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