𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE 1996 IEEE Hong Kong Electron Devices Meeting - Hong Kong (29 June 1996)] Proceedings 1996 IEEE Hong Kong Electron Devices Meeting - Area-efficient layout design for output transistors with consideration of ESD reliability

✍ Scribed by Ming-Dou Ker, ; Chung-Yu Wu, ; Chien-Chang Huang, ; Hun-Hsien Chang, ; Chau-Neng Wu, ; Ta-Lee Yu,

Book ID: 126642930
Publisher: IEEE
Year: 1996
Weight: 431 KB
Category: Article
ISBN-13: 9780780330917
DOI: 10.1109/HKEDM.1996.566324

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 1996 IEEE Hong Kong Electron Devic

[IEEE 1996 IEEE Hong Kong Electron Devices Meeting - Hong Kong (29 June 1996)] Proceedings 1996 IEEE Hong Kong Electron Devices Meeting - A novel ultrafast functional device: resonant tunneling high electron mobility transistor

✍ Chen, K.J.; Maezawa, K.; Yamamoto, M. 📂 Article 📅 1996 🏛 IEEE 🌐 English ⚖ 335 KB

[IEEE 1996 IEEE Hong Kong Electron Devic

[IEEE 1996 IEEE Hong Kong Electron Devices Meeting - Hong Kong (29 June 1996)] Proceedings 1996 IEEE Hong Kong Electron Devices Meeting - SIMNI SOI formed by high intensity nitrogen implantation

✍ Poon, M.C.; Wong, S.P.; Lam, Y.W.; Chu, P.K.; Sin, J.K.O. 📂 Article 📅 1996 🏛 IEEE ⚖ 241 KB

[IEEE 1996 IEEE Hong Kong Electron Devic

[IEEE 1996 IEEE Hong Kong Electron Devices Meeting - Hong Kong (29 June 1996)] Proceedings 1996 IEEE Hong Kong Electron Devices Meeting - Effect of base potential distribution on thermal runaway and the power limitation of the heterojunction bipolar transistor with circular dot geometry

✍ Liou, L.L.; Jenkins, T.; Huang, C.I. 📂 Article 📅 1996 🏛 IEEE ⚖ 302 KB

[IEEE 1996 IEEE Hong Kong Electron Devic

[IEEE 1996 IEEE Hong Kong Electron Devices Meeting - Hong Kong (29 June 1996)] Proceedings 1996 IEEE Hong Kong Electron Devices Meeting - Properties of Si-SiO/sub 2/ interface traps due to low-energy Ar/sup +/ backsurface bombardment in n-channel nitrided MOSFETs

✍ Surya, C.; Wang, W.; Fong, W.K.; Chan, C.H.; Lai, P.T. 📂 Article 📅 1996 🏛 IEEE ⚖ 243 KB

[IEEE 1999 IEEE Hong Kong Electron Devic

[IEEE 1999 IEEE Hong Kong Electron Devices Meeting - Shatin, Hong Kong (26 June 1999)] Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) - Electrical modeling of MEMS sensor for integrated accelerometer applications

✍ Lee, W.F.; Chan, P.K.; Siek, L. 📂 Article 📅 1999 🏛 IEEE ⚖ 345 KB

[IEEE Proceedings 1998 IEEE Hong Kong El

[IEEE Proceedings 1998 IEEE Hong Kong Electron Devices Meeting - Hong Kong (1998.08.29-1998.08.29)] Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) - Wafer-level electromigration reliability test for deep-submicron interconnect metallization

✍ Loh, Wye; Tse, Man; Chan, Lap; Eo, Keng 📂 Article 📅 1998 🏛 IEEE ⚖ 364 KB