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[IEEE 1996 IEEE Hong Kong Electron Devices Meeting - Hong Kong (29 June 1996)] Proceedings 1996 IEEE Hong Kong Electron Devices Meeting - SIMNI SOI formed by high intensity nitrogen implantation

✍ Scribed by Poon, M.C.; Wong, S.P.; Lam, Y.W.; Chu, P.K.; Sin, J.K.O.

Book ID: 126629437
Publisher: IEEE
Year: 1996
Weight: 241 KB
Category: Article
ISBN-13: 9780780330917
DOI: 10.1109/HKEDM.1996.566298

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