[IEEE 1996 IEEE Hong Kong Electron Devices Meeting - Hong Kong (29 June 1996)] Proceedings 1996 IEEE Hong Kong Electron Devices Meeting - Effect of base potential distribution on thermal runaway and the power limitation of the heterojunction bipolar transistor with circular dot geometry

✍ Scribed by Liou, L.L.; Jenkins, T.; Huang, C.I.

• Book ID: 126677435
• Publisher: IEEE
• Year: 1996
• Weight: 302 KB
• Category: Article
• ISBN-13: 9780780330917
• DOI: 10.1109/HKEDM.1996.566306