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[IEEE 1996 IEEE Hong Kong Electron Devices Meeting - Hong Kong (29 June 1996)] Proceedings 1996 IEEE Hong Kong Electron Devices Meeting - Properties of Si-SiO/sub 2/ interface traps due to low-energy Ar/sup +/ backsurface bombardment in n-channel nitrided MOSFETs
✍ Scribed by Surya, C.; Wang, W.; Fong, W.K.; Chan, C.H.; Lai, P.T.
- Book ID
- 126673566
- Publisher
- IEEE
- Year
- 1996
- Weight
- 243 KB
- Category
- Article
- ISBN-13
- 9780780330917
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