✦ LIBER ✦

Identification of Process Induced Defects in Silicon Power Devices

✍ Scribed by Astrova, E.V.; Kozlov, V.A.; Lebedev, A.A.; Voronkov, V.B.

Book ID: 126289072
Publisher: Trans Tech Publications, Ltd.
Year: 1999
Tongue: English
Weight: 405 KB
Volume: 69-70
Category: Article
ISSN: 1662-9779
DOI: 10.4028/www.scientific.net/SSP.69-70.539

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Reduction of process-induced defects in

Reduction of process-induced defects in power devices

✍ H.J. Schulze 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 402 KB

Diffusion-Induced Doping Processes and D

Diffusion-Induced Doping Processes and Defect Kinetics in Power Devices

✍ H.-J. Schulze; F.-J. Niedernostheide; K. Bauer; P. Weidner 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 413 KB

The fabrication of high-power devices requires the creation of deep p-n junctions-typically deeper than 100 lm-, uniform and localized carrier lifetime control, and efficient gettering processes. It is shown how these processes and their interactions influence the device characteristics, and how the

Rapid thermal process-induced defects in

Rapid thermal process-induced defects in silicon position detectors

✍ M. Alietti; F. Nava; R. Tonini; P. Cantoni; L. Stagni; A. Cavallini 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 670 KB

Process-Induced Morphological Defects in

Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide

✍ J. A. Powell; D. J. Larkin 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 647 KB

Process Induced Crystal Defects in Dislo

Process Induced Crystal Defects in Dislocation-Free n-Type Silicon Material

✍ Dipl.- Ing. W. Fischer; Doz. Dr. sc. techn. G. Heymann 📂 Article 📅 1979 🏛 John Wiley and Sons 🌐 English ⚖ 729 KB

Photoinduced transient reflectance inves

Photoinduced transient reflectance investigation of process-induced near-surface defects in silicon

✍ A. Esser; G. Maidorn; H. Kurz 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 598 KB