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Reduction of process-induced defects in power devices

✍ Scribed by H.J. Schulze


Book ID
103952731
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
402 KB
Volume
4
Category
Article
ISSN
0921-5107

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The fabrication of high-power devices requires the creation of deep p-n junctions-typically deeper than 100 lm-, uniform and localized carrier lifetime control, and efficient gettering processes. It is shown how these processes and their interactions influence the device characteristics, and how the