An analytical model for two-dimensional electron gas ( ) 2-DEG for a pseudomorphic Al Ga As r In Ga As modulaz 1 y z y 1 y y tion-doped field-effect transistor is de¨eloped. The 2-DEG density is calculated as a function of de¨ice dimensions and doping density. A simple analytical expression is estab
High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors
✍ Scribed by Ketterson, A.; Moloney, M.; Masselink, W.T.; Peng, C.K.; Klem, J.; Fischer, R.; Kopp, W.; Morkoc, H.
- Book ID
- 118000199
- Publisher
- IEEE
- Year
- 1985
- Tongue
- English
- Weight
- 312 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0741-3106
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A two-dimensional analytical model for the current᎐¨oltage characteristics of a pseudomorphic AlGaAsrInGaAs modulationdoped field-effect transistor is de¨eloped using charge-control analysis for its microwa¨e circuit applications. The two-dimensional potential, field, electron concentration, and ¨el