Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
✍ Scribed by Henderson, T.; Aksun, M.I.; Peng, C.K.; Morkoc, H.; Chao, P.C.; Smith, P.M.; Duh, K.-H.G.; Lester, L.F.
- Book ID
- 120991484
- Publisher
- IEEE
- Year
- 1986
- Tongue
- English
- Weight
- 251 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0741-3106
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
ᎏdynamic, DC, and OIL chirp. By numerically analyzing the rate equations for the injection-locked laser, it is shown that the OIL chirp is compatible to the DC and dynamic chirp, but different in sign. Hence, a considerable reduction in frequency chirp can be achieved by the OIL. REFERENCES 1. C. Li
A two-dimensional analytical model for the current᎐¨oltage characteristics of a pseudomorphic AlGaAsrInGaAs modulationdoped field-effect transistor is de¨eloped using charge-control analysis for its microwa¨e circuit applications. The two-dimensional potential, field, electron concentration, and ¨el
be easily realized with a single metal insert within a rectangular waveguide. Measured frequency responses of a rectangular waveguide E-plane bandpass filter which used quarterwavelength metallic septa shows 30 dB rejection at 36 GHz. The central resonator was resonant at 36.8 GHz. This kind of reso