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Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

โœ Scribed by Levinshtein, M. E.; Rumyantsev, S. L.; Tauk, R.; Boubanga, S.; Dyakonova, N.; Knap, W.; Shchepetov, A.; Bollaert, S.; Rollens, Y.; Shur, M. S.


Book ID
120402602
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
649 KB
Volume
102
Category
Article
ISSN
0021-8979

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