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Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

✍ Scribed by Levinshtein, M. E.; Rumyantsev, S. L.; Tauk, R.; Boubanga, S.; Dyakonova, N.; Knap, W.; Shchepetov, A.; Bollaert, S.; Rollens, Y.; Shur, M. S.

Book ID: 120402602
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 649 KB
Volume: 102
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2781087

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