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High resolution deep level transient spectroscopy and process-induced defects in silicon

✍ Scribed by J.H. Evans-Freeman; D. Emiroglu; K.D. Vernon-Parry

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
107 KB
Volume
114-115
Category
Article
ISSN
0921-5107

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πŸ“œ SIMILAR VOLUMES

High resolution Laplace deep level trans
High resolution Laplace deep level transient spectroscopy of p-type polycrystalline diamond
✍ Mitromara, N. ;Evans-Freeman, J. H. ;GΓ€dtke, C. ;May, P. W. πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 302 KB

## Abstract High resolution Laplace deep level transient spectroscopy (LDLTS) has been used to characterise deep electronic states in the band gap of polycrystalline p‐type diamond. The thin diamond films were grown by the hot‐filament chemical vapour deposition (HFCVD) technique on p‐type and n‐ty