High Rate Epitaxial Growth of Diamond on Si(100) by DC Plasma CVD
β Scribed by Wang, Wanlu ;Liao, Kejun ;Gao, Jinying
- Publisher
- John Wiley and Sons
- Year
- 1991
- Tongue
- English
- Weight
- 227 KB
- Volume
- 128
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
Carbon films of few atomic layers in thickness were grown on Si(100) substrates in an ultrahigh vacuum environment by pulsed-laser evaporation of graphite targets. Auger studies of the growth shows it to be layer by layer. It was found that the first two layers deposited, which wet the silicon surfa
The epitaxial growth of cubic-silicon carbide SiC on Si substrates was carried out by triode plasma CVD using Ε½ . dimethylsilane DMS as source gas. The lowering of electron temperature and the reduction of the rf fluctuation of plasma space potential in the afterglow plasma region were realized by a