Epitaxial growth of diamond-like films on Si(100) by pulsed-laser evaporation of graphite

✍ Scribed by J.A. Martin-Gago; L. Vazquez; P. Bernard; S. Ferrer; F. Comin

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 254 KB
• Volume: 11
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(92)90236-3

✦ Synopsis

Carbon films of few atomic layers in thickness were grown on Si(100) substrates in an ultrahigh vacuum environment by pulsed-laser evaporation of graphite targets. Auger studies of the growth shows it to be layer by layer. It was found that the first two layers deposited, which wet the silicon surface as seen by ion scattering spectroscopy, are carbidic, evolving to diamond like when between 4 and 6 monolayers have been deposited.