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Si(100) epitaxy by low-temperature UHV-CVD: AFM study of the initial stages of growth

✍ Scribed by F. Chollet; E. André; W. Vandervorst; M. Caymax


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
583 KB
Volume
157
Category
Article
ISSN
0022-0248

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