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Epitaxial growth of diamond on diamond substrate by plasma assisted CVD

โœ Scribed by Matsukazu Kamo; Hisayoshi Yurimoto; Yoichiro Sato


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
447 KB
Volume
33-34
Category
Article
ISSN
0169-4332

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We have investi ated the effects of reactant residence time on the properties of microwav+a88isted CV % diamond films. Using a constant process pressure of 40 Torr and gas composition of 1% CHb in Hr? the total gas flow rate was adjusted from 25 to 800 seem. For OUT reactor, this correspond8 to res