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High-quality oxide/nitride/oxide gate insulator for GaN MIS structures

โœ Scribed by Gaffey, B.; Guido, L.J.; Wang, X.W.; Ma, T.P.


Book ID
114538593
Publisher
IEEE
Year
2001
Tongue
English
Weight
132 KB
Volume
48
Category
Article
ISSN
0018-9383

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Fabrication of AlGaN/GaN double-insulato
โœ Balachander, Krishnan ;Arulkumaran, Subramaniam ;Sano, Y. ;Egawa, Takashi ;Baska ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 164 KB

## Abstract We report on the fabrication of AlGaN/GaN doubleโ€insulator MOSHEMTs using SiO~2~ and SiN as the prime gate insulators. Both the dielectrics showed enhanced saturation current density and pinchโ€off voltage compared to conventional HEMTs. The SiO~2~/SiN/AlGaN/GaN MOSHEMTs exhibited a low