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High-performance GaN metal–insulator–semiconductor ultraviolet photodetectors using gallium oxide as gate layer

✍ Scribed by Lee, Ming-Lun; Mue, T. S.; Huang, F.W.; Yang, J. H.; Sheu, J. K.


Book ID
115414208
Publisher
Optical Society of America
Year
2011
Tongue
English
Weight
983 KB
Volume
19
Category
Article
ISSN
1094-4087

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## Abstract We report on the fabrication of AlGaN/GaN double‐insulator MOSHEMTs using SiO~2~ and SiN as the prime gate insulators. Both the dielectrics showed enhanced saturation current density and pinch‐off voltage compared to conventional HEMTs. The SiO~2~/SiN/AlGaN/GaN MOSHEMTs exhibited a low