High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

✍ Scribed by Chabak, Kelson D.; Walker, Dennis E.; Johnson, Michael R.; Crespo, Antonio; Dabiran, Amir M.; Smith, David J.; Wowchak, Andrew M.; Tetlak, Stephen K.; Kossler, Mauricio; Gillespie, James K.; Fitch, Robert C.; Trejo, Manuel

• Book ID: 121327163
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 333 KB
• Volume: 32
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2011.2167952