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Growth of High-Quality AlN, GaN and AlGaN with Atomically Smooth Surfaces on Sapphire Substrates

✍ Scribed by Ohba, Yasuo; Yoshida, Hiroaki; Sato, Rie


Book ID
126616122
Publisher
Institute of Pure and Applied Physics
Year
1997
Tongue
English
Weight
627 KB
Volume
36
Category
Article
ISSN
0021-4922

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## Abstract In order to obtain a high quality thick GaN layer on a 2‐inch Si substrate without any crack, we investigated three kinds of buffer layer (AlGaN graded structure, AlN/GaN super lattice (SL) structure, and AlN/thick GaN/AlN structure) using a metal‐organic chemical vapor deposition (MOCV