Mechanism for Reducing Dislocations at the Initial Stage of GaN Growth on Sapphire Substrates Using High-Temperature-Grown Single-Crystal AlN Buffer Layers

✍ Scribed by Ohba, Yasuo; Iida, Susumu

• Book ID: 121872927
• Publisher: Institute of Pure and Applied Physics
• Year: 2002
• Tongue: English
• Weight: 161 KB
• Volume: 41
• Category: Article
• ISSN: 0021-4922
• DOI: 10.1143/JJAP.41.L615