Formation chemistry of high-density nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates

✍ Scribed by Hao, M.; Ishikawa, H.; Egawa, T.

• Book ID: 126821056
• Publisher: American Institute of Physics
• Year: 2004
• Tongue: English
• Weight: 472 KB
• Volume: 84
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.1751607