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Growth and properties of GaN on Si (111) substrates with AlGaN/AlN buffer layer by NH3-GSMBE

✍ Scribed by Zhang, N H; Wang, X L; Zeng, Y P; Xiao, H L; Wang, J X; Liu, H X; Li, J M

Book ID: 115465352
Publisher: Institute of Physics
Year: 2005
Tongue: English
Weight: 412 KB
Volume: 38
Category: Article
ISSN: 0022-3727
DOI: 10.1088/0022-3727/38/12/006

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