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Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers

✍ Scribed by Raghavan, Srinivasan; Redwing, Joan M.

Book ID: 120308924
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 807 KB
Volume: 98
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1978991

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