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Deposition of AlGaN films on (111) Si substrates and optimization of GaN growth on Si using intermediate-temperature AlGaN buffer layers

✍ Scribed by Cheng-Liang Wang; Jyh-Rong Gong; Wei-Tsai Liao; Chung-Kwei Lin; Tai-Yuan Lin

No coin nor oath required. For personal study only.

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