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Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminum flow rates on the properties of GaN on Si (111) substrates

✍ Scribed by Yang, Yibin; Xiang, Peng; Liu, Minggang; Chen, Weijie; He, Zhiyuan; Han, Xiaobiao; Ni, Yiqiang; Yang, Fan; Yao, Yao; Wu, Zhisheng; Liu, Yang; Zhang, Baijun

Book ID: 120296978
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 715 KB
Volume: 376
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2013.04.043

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