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The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD

✍ Scribed by Xu, Pei-Qiang; Jiang, Yang; Ma, Zi-Guang; Deng, Zhen; Lu, Tai-Ping; Du, Chun-Hua; Fang, Yu-Tao; Zuo, Peng; Chen, Hong

Book ID: 121382903
Publisher: Institute of Physics
Year: 2013
Tongue: English
Weight: 795 KB
Volume: 30
Category: Article
ISSN: 0256-307X
DOI: 10.1088/0256-307X/30/2/028101

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## Abstract In order to obtain a high quality thick GaN layer on a 2‐inch Si substrate without any crack, we investigated three kinds of buffer layer (AlGaN graded structure, AlN/GaN super lattice (SL) structure, and AlN/thick GaN/AlN structure) using a metal‐organic chemical vapor deposition (MOCV

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