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High-quality Ge epilayers on Si with low threading-dislocation densities

✍ Scribed by Luan, Hsin-Chiao; Lim, Desmond R.; Lee, Kevin K.; Chen, Kevin M.; Sandland, Jessica G.; Wada, Kazumi; Kimerling, Lionel C.

Book ID: 120489142
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 321 KB
Volume: 75
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.125187

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## Abstract InGaN light‐emitting diodes (LEDs) on GaN substrates with low threading dislocation densities (TDDs) were fabricated, and the characteristics of the LEDs were compared with those on sapphire substrates. LEDs with 3 nm‐thick‐quantum‐wells (QWs) grown on GaN as well as on sapphire substra