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High quality GaN films on Si substrates

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 107 KB
Volume: 16
Category: Article
ISSN: 0961-1290
DOI: 10.1016/s0961-1290(03)80086-8

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We present a study on the material properties of GaN films grown on (111) silicon substrates by low-pressure metalorganic chemical vapour deposition using AlN buffer layers. This buffer layer is optimised with respect to growth temperature and time for the optical and structural properties of the Ga