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CBE-grown high-quality GaAs on Si substrate

✍ Scribed by H. Uchida; M. Adachi; H. Nishikawa; T. Egawa; T. Jimbo; M. Umeno


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
292 KB
Volume
100-101
Category
Article
ISSN
0169-4332

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Effect of High Temperature-Pressure on G
✍ J. Bak-Misiuk; E. Dynowska; A. Misiuk; M. Calamiotou; A. Kozanecki; J. Domagala; πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 227 KB πŸ‘ 2 views

The effect of high hydrostatic pressure -high temperature treatment on strain state of thin GaAs layers, grown on vicinal (001) Si substrate, misoriented towards [110] with different miscut angles and with two different orientations of GaAs layer in relation to the miscut direction, was investigated