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High-quality GaN epitaxial layer grown by metalorganic vapor phase epitaxy on (111) MgAl2O4 substrate

✍ Scribed by Kuramata, Akito; Horino, Kazuhiko; Domen, Kay; Shinohara, Kouji; Tanahashi, Toshiyuki

Book ID: 120495477
Publisher: American Institute of Physics
Year: 1995
Tongue: English
Weight: 469 KB
Volume: 67
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.114445

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