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Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

✍ Scribed by Feltin, Eric; Beaumont, B.; LauÌgt, M.; de Mierry, P.; VenneÌgueÌs, P.; LahreÌche, H.; Leroux, M.; Gibart, P.

Book ID: 120056519
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 373 KB
Volume: 79
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1415043

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