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Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy

✍ Scribed by R. Collazo; S. Mita; R. Schlesser; Z. Sitar


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
130 KB
Volume
2
Category
Article
ISSN
1862-6351

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The metalorganic vapor phase epitaxial (MOVPE) growth of cubic GaN layers on misoriented GaAs (001) substrates, the faces of which were tilted from (001) toward [1 " 10] or [110] by 4 , was performed in order to investigate the effect of the substrate misorientation on the inclusion of hexagonal pha