In this study, the nature of the Mn electronic level in (In,Mn)As was investigated. (In,Mn)As thin films were epitaxially deposited on GaAs (0 0 1) substrates using metalorganic vapor phase epitaxy. Electronic transport properties were determined from Hall effect measurements over a temperature rang
✦ LIBER ✦
Nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy
✍ Scribed by J. F. Rommeluère; L. Svob; F. Jomard; J. Mimila-Arroyo; G. Amiri; A. Lusson; V. Sallet; O. Gorochov; P. Galtier; Y. Marfaing
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 122 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1862-6351
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