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Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy

✍ Scribed by S.J. May; A.J. Blattner; B.W. Wessels

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 205 KB
Volume: 340-342
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2003.09.223

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✦ Synopsis

In this study, the nature of the Mn electronic level in (In,Mn)As was investigated. (In,Mn)As thin films were epitaxially deposited on GaAs (0 0 1) substrates using metalorganic vapor phase epitaxy. Electronic transport properties were determined from Hall effect measurements over a temperature range of 78-300 K and all films were found to be p-type. Mn was found to act as a shallow acceptor with an activation energy ranging from 22 to 16 meV as the hole concentration increased from 8.5 Â 10 17 to 1.7 Â 10 18 cm À3 . In heavily doped films, a large percentage of Mn is found to be electronically inactive and the hole concentrations are up to a factor of 10 3 times smaller than the Mn concentration.

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