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Reduction of autodoped gallium concentration in HgCdTe layers on GaAs grown by metalorganic vapor phase epitaxy

โœ Scribed by H. Nishino; S. Murakami; H. Ebe; Y. Nishijima

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
380 KB
Volume
146
Category
Article
ISSN
0022-0248

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Defect States in Cubic GaN Epilayer Grow
Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy
โœ Xu, S.J. ;Or, C.T. ;Li, Q. ;Zheng, L.X. ;Xie, M.H. ;Tong, S.Y. ;Yang, Hui ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 89 KB ๐Ÿ‘ 2 views

Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons, the donor and the acceptors we