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Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

✍ Scribed by Kai Cheng; M. Leys; S. Degroote; B. Van Daele; S. Boeykens; J. Derluyn; M. Germain; G. Van Tendeloo; J. Engelen; G. Borghs

Book ID: 107453615
Publisher: Springer US
Year: 2006
Tongue: English
Weight: 428 KB
Volume: 35
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-006-0105-1

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